Power Electronics High Voltage Technologies

Objective

This project is about designing and demonstrating a high voltage bi-directional rectifier system rated at 300 kW, with a switching frequency of at least 10 kHz and a DC-bus higher than 2 kV. One main undertaking of the project is to deliver a lightweight efficient system. To achieve this, a mix of technological and topological studies will be carried out, including deployment of novel silicon-carbide (SiC) semiconductor technology at 1.7 and 3.3 kV with advanced multi-level power converter architectures.